High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation

dc.creator	Urcuyo Solórzano, Roberto
dc.creator	Duong, Dinh Loc
dc.creator	Jeong, Hye Yun
dc.creator	Burghard, Marko
dc.creator	Kern, Klaus
dc.date.accessioned	2022-03-15T16:15:04Z
dc.date.available	2022-03-15T16:15:04Z
dc.date.issued	2016
dc.description.abstract	Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes.	en
dc.description.procedence	UCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Electroquímica y Energía Química (CELEQ)
dc.format.extent	1600223
dc.identifier.citation	https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201600223
dc.identifier.doi	10.1002/aelm.201600223
dc.identifier.issn	2199-160X
dc.identifier.uri	https://hdl.handle.net/10669/86058
dc.language.iso	Inglés
dc.rights	acceso abierto
dc.source	Advanced Electronic Materials, 2(9), pp. 1600223
dc.subject	Graphene	en
dc.subject	Mwork function modulationetal–insulator–metal diodes	en
dc.subject	Work function modulation	en
dc.title	High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation	en
dc.type	artículo

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