On the photoluminescence theory in nanocrystalline silicon: A new improvement
| dc.creator | Ramírez Porras, Arturo | |
| dc.creator | Prado Bermúdez, Isaac José | |
| dc.date.accessioned | 2026-04-29T14:09:07Z | |
| dc.date.issued | 2025-09-23 | |
| dc.description.abstract | We present an improved model for photoluminescence (PL) in nanocrystalline silicon based on LogNormal size distributions of quantum wires (QWs) and quantum dots (QDs). The model predicts four spectral components: band-to-band and localized-to-band recombinations in both QWs and QDs. This approach also captures the influence of oxide-related surface states. Experimental validation with porous silicon films, using Fourier-transform infrared and fluorescence spectroscopy, confirms the presence of oxide bands and supports the predicted PL contributions. The model provides a consistent framework for interpreting PL spectra and extracting nanostructure size distributions in silicon photonics. | |
| dc.description.procedence | UCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA) | |
| dc.description.sponsorship | Universidad de Costa Rica/[816-C3182]/UCR/Costa Rica | |
| dc.identifier.codproyecto | 816-C3182 | |
| dc.identifier.doi | https://doi.org/10.1063/5.0293503 | |
| dc.identifier.uri | https://hdl.handle.net/10669/104304 | |
| dc.language.iso | eng | |
| dc.rights | acceso embargado | |
| dc.source | Journal of Applied Physics, 138(12) | |
| dc.subject | Porous Silicon | |
| dc.subject | Materials Science | |
| dc.subject | Spectroscopy | |
| dc.title | On the photoluminescence theory in nanocrystalline silicon: A new improvement | |
| dc.type | artículo original |