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Spatially Resolved Oxidation and Enhanced Photooxidation in Nanocrystalline Silicon

dc.creatorRamírez Porras, Arturo
dc.creatorGodínez, Alexander
dc.date.accessioned2026-04-29T15:04:17Z
dc.date.issued2024-12-25
dc.description.abstractSpatially resolved oxidation of nanocrystalline silicon surfaces has been studied using Fourier Fourier-transformed infrared microscopy. At the same time, photoluminescence (PL) quenching has been recorded. Both characteristics are related to the increase of silicon oxide species on the sample surfaces. Illumination of surfaces by blue light increases oxidation rates and speeds PL quenching in the form of a stretched exponential function. A possible explanation of this behavior considering quantum dots and quantum wires present in the material is proposed.
dc.description.procedenceUCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA)
dc.description.procedenceUCR::Vicerrectoría de Docencia::Ciencias Básicas::Facultad de Ciencias::Escuela de Física
dc.description.procedenceUCR::Vicerrectoría de Docencia::Ciencias Básicas::Facultad de Ciencias::Escuela de Química
dc.description.sponsorshipUniversidad de Costa Rica/[816-B9136]/UCR/Costa Rica
dc.identifier.codproyecto816-B9136
dc.identifier.doihttps://doi.org/10.1142/S0218625X2550060X
dc.identifier.urihttps://hdl.handle.net/10669/104305
dc.language.isoeng
dc.rightsacceso embargado
dc.sourceSurface Review and Letters, 2550060, 1-7
dc.subjectPorous Materials
dc.subjectPhotoluminescence
dc.subjectOxidation
dc.titleSpatially Resolved Oxidation and Enhanced Photooxidation in Nanocrystalline Silicon
dc.typeartículo original

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