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dc.creatorBalberg, I.
dc.creatorNery, Guillermo
dc.creatorRamírez Porras, Arturo
dc.creatorResto, O.
dc.creatorWeisz, S. Z.
dc.creatorLubianiker, Y.
dc.date.accessioned2020-01-31T21:13:12Z
dc.date.available2020-01-31T21:13:12Z
dc.date.issued1995
dc.identifier.citationhttps://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/phototransport-properties-of-asich-alloys/319AB54D3CB8E22AE5D2E8487751BD56
dc.identifier.issn1946-4274
dc.identifier.urihttps://hdl.handle.net/10669/80435
dc.description.abstractWe report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.es_ES
dc.language.isoen_USes_ES
dc.sourceMaterials Research Society Symposium Proceedings, 377, pp.583-588es_ES
dc.subjectAmorphous silicones_ES
dc.subjectAlloyses_ES
dc.titlePhototransport Properties of a-SiC:H Alloyses_ES
dc.typeartículo científico
dc.identifier.doi10.1557/PROC-377-583
dc.description.procedenceUCR::Vicerrectoría de Docencia::Ciencias Básicas::Facultad de Ciencias::Escuela de Físicaes_ES


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