• High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation 

      Urcuyo Solórzano, Roberto; Duong, Dinh Loc; Jeong, Hye Yun; Burghard, Marko; Kern, Klaus (2016)
      Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work ...
    • Hot carrier extraction from multilayer graphene 

      Urcuyo Solórzano, Roberto; Duong, Dinh Loc; Sailer, Patrick; Burghard, Marko; Kern, Klaus (2016)
      Hot carriers in semiconductor or metal nanostructures are relevant, for instance, to enhance the activity of oxide-supported metal catalysts or to achieve efficient photodetection using ultrathin semiconductor layers. ...
    • Thin-layer black phosphorus/GaAs heterojunction pn diodes 

      Gehring, Pascal; Urcuyo Solórzano, Roberto; Duong, Dinh Loc; Burghard, Marko; Kern, Klaus (2015)
      Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorus emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction ...