Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon

dc.creator	Weisz, S. Z.
dc.creator	Ramírez Porras, Arturo
dc.creator	Gómez, Manuel
dc.creator	Many, A.
dc.creator	Goldstein, Yehuda
dc.creator	Savir, Esther
dc.date.accessioned	2020-01-31T21:49:05Z
dc.date.available	2020-01-31T21:49:05Z
dc.date.issued	1997
dc.identifier.citation	https://www.sciencedirect.com/science/article/pii/S0022231396004383
dc.identifier.issn	0022-2313
dc.identifier.uri	https://hdl.handle.net/10669/80437
dc.description.abstract	Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.	es_ES
dc.language.iso	en_US	es_ES
dc.source	Journal of Luminescence 72-74, pp.729-730	es_ES
dc.subject	Photoluminescence	es_ES
dc.subject	Surface States	es_ES
dc.subject	Porous silicon	es_ES
dc.title	Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon	es_ES
dc.type	artículo original
dc.identifier.doi	10.1016/S0022-2313(96)00438-3
dc.description.procedence	UCR::Vicerrectoría de Docencia::Ciencias Básicas::Facultad de Ciencias::Escuela de Física	es_ES