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Phototransport Properties of a-SiC:H Alloys
(1995)
We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the ...
Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon
(1997)
Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
Design and Characterization of a High Vacuum Metals Deposition System based on Electron Beam Evaporation
(2010-08-03)
We describe a high vacuum metals deposition system based ona variation of a pendant-drop type electron beam evaporator.This system uses a Molybdenum crucible as an evaporantinstead of a rod or wire usually used in ultrathin ...
Vacuum treatment to stabilize oxidation at low temperature region in porous silicon
(2020)
Oxidation in porous silicon is studied for as-etched samples and samples subjected to high vacuum at room temperature. Attenuated Total Reflectance (ATR) measurements in infrared spectroscopy for temperatures ranging from ...
Stochastic approach to the smart quantum confinement model in porous silicon
(Surface Science 515 (2002) L509-L513, 2002)
A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the ...
Estimation of Silicon Nanocrystalline Sizes from Photoluminescence Measurements of RF Co-Sputtered Si/SiO2 Films
(Materials Research Society Symposium Proceedings 737 (2003), 2003)
A stochastic distribution of nanocrystalline sizes model is applied to fit photoluminescence
(PL) spectra of luminescent Si nanocrystals in a Si/SiO2 matrix synthesized by RF co-sputtering
on the top of quartz substrates. ...
Study of oxide bands in p-type porous silicon layers
(2019)
The interest in developing fast and reliable chemical and biochemical sensors in an inexpensive way is something that has attracted a lot of efforts in the last decades. One of the potential material candidates is ...