Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon
artículo original
Fecha
1997Autor
Weisz, S. Z.
Ramírez Porras, Arturo
Gómez, Manuel
Many, A.
Goldstein, Yehuda
Savir, Esther
Metadatos
Mostrar el registro completo del ítemResumen
Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
External link to the item
10.1016/S0022-2313(96)00438-3Colecciones
- Física [111]