Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon
Weisz, S. Z.
Ramírez Porras, Arturo
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Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
External link to the item10.1016/S0022-2313(96)00438-3
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