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dc.creatorAllen, Kevin
dc.creatorPereira Cubillo, Juan Sebastián
dc.creatorRamírez Porras, Arturo
dc.date.accessioned2020-01-31T20:54:03Z
dc.date.available2020-01-31T20:54:03Z
dc.date.issued2020
dc.identifier.citationhttps://www.sciencedirect.com/science/article/pii/S0169433219330569?via%3Dihubes_ES
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/10669/80434
dc.description.abstractOxidation in porous silicon is studied for as-etched samples and samples subjected to high vacuum at room temperature. Attenuated Total Reflectance (ATR) measurements in infrared spectroscopy for temperatures ranging from 21 °C to 201 °C show two behaviors concerning oxide evolution: at temperatures below 100–130 °C, oxidation proceeds very slowly, and slower in the case of vacuum treated samples. It is believed that moisture extraction from the pores in vacuum medium is responsible for this enhanced behavior. Optical measurements show that nanostructures resident in the samples are not affected morphologically, although their surfaces exhibit a relatively low oxidation increase, lower for the vacuum treated samples, in accordance with the infrared results.es_ES
dc.description.sponsorshipUniversidad de Costa Rica/[816-B9-136]/UCR/Costa Ricaes_ES
dc.language.isoen_USes_ES
dc.sourceApplied Surface Science, vol.501(31), pp.1-4es_ES
dc.subjectPorous silicones_ES
dc.subjectOxideses_ES
dc.subjectInfrared spectroscopyes_ES
dc.subjectPhotoluminescencees_ES
dc.titleVacuum treatment to stabilize oxidation at low temperature region in porous silicones_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1016/j.apsusc.2019.144240
dc.description.procedenceUCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA)es_ES
dc.description.procedenceUCR::Vicerrectoría de Docencia::Ciencias Básicas::Facultad de Ciencias::Escuela de Físicaes_ES
dc.identifier.codproyecto816-B9-136


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