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Stochastic approach to the smart quantum confinement model in porous silicon
dc.creator | Ramírez Porras, Arturo | |
dc.creator | Weisz, S. Z. | |
dc.date.accessioned | 2010-07-23T22:18:27Z | |
dc.date.available | 2010-07-23T22:18:27Z | |
dc.date.issued | 2002 | |
dc.identifier.citation | http://dx.doi.org/10.1016/S0039-6028(02)01963-5 | |
dc.identifier.uri | https://hdl.handle.net/10669/322 | |
dc.description.abstract | A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework. | en |
dc.description.sponsorship | Vicerrectoría de Investigación, UCR. | es_ES |
dc.language.iso | en_US | es_ES |
dc.publisher | Surface Science 515 (2002) L509-L513 | en |
dc.subject | Modelo semiempírico | es_ES |
dc.subject | Métodos electroquímicos | es_ES |
dc.subject | Fotoluminiscencia | es_ES |
dc.subject | Silicio | es_ES |
dc.subject | Óxido de Silicio | es_ES |
dc.subject | Potencial de pozo | es_ES |
dc.subject | Superficies semiconductoras | es_ES |
dc.title | Stochastic approach to the smart quantum confinement model in porous silicon | en |
dc.type | artículo original | |
dc.identifier.doi | 10.1016/S0039-6028(02)01963-5 | es_ES |
dc.description.procedence | UCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA) | es_ES |
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