Stochastic approach to the smart quantum confinement model in porous silicon
artículo original
Fecha
2002Autor
Ramírez Porras, Arturo
Weisz, S. Z.
Metadatos
Mostrar el registro completo del ítemResumen
A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework.
External link to the item
10.1016/S0039-6028(02)01963-5Colecciones
- Física [114]
El ítem tiene asociados los siguientes ficheros de licencia: