Stochastic approach to the smart quantum confinement model in porous silicon
Ramírez Porras, Arturo
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A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework.
Enlace externo al ítem10.1016/S0039-6028(02)01963-5
- Física 
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