dc.creator | Guzmán Verri, Gian Giacomo | |
dc.creator | Lew Yan Voon, Lok Chong | |
dc.date.accessioned | 2016-05-27T21:33:52Z | |
dc.date.available | 2016-05-27T21:33:52Z | |
dc.date.issued | 2007-08-30 | |
dc.identifier.citation | http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.075131 | |
dc.identifier.issn | 2469-9969 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.uri | https://hdl.handle.net/10669/27863 | |
dc.description.abstract | We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada’s [Phys. Rev. Lett. 68, 1579 (1992)] rule. Comparison to a recent ab initio calculation is made. | es_ES |
dc.description.sponsorship | NSF CAREER award (NSF Grant No. 0454849) | es_ES |
dc.description.sponsorship | Research Challenge grant from Wright State University and the Ohio Board of Regents. | es_ES |
dc.language.iso | en_US | es_ES |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 Costa Rica | es_ES |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/cr/ | es_ES |
dc.source | Physical Review B 76, 075131 (2007) | es_ES |
dc.subject | silicene | es_ES |
dc.subject | tight-binding | es_ES |
dc.subject | electronic properties | es_ES |
dc.title | Electronic structure of silicon-based nanostructures | es_ES |
dc.type | artículo original | |
dc.identifier.doi | doi.org/10.1103/PhysRevB.76.075131 | es_ES |
dc.description.procedence | UCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA) | es_ES |