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dc.creatorGuzmán Verri, Gian Giacomoes_ES
dc.creatorLew Yan Voon, Lok Chonges_ES
dc.date.accessioned2016-05-27T21:33:52Zes_ES
dc.date.available2016-05-27T21:33:52Zes_ES
dc.date.issued2007-08-30es_ES
dc.identifier.citationhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.075131es_ES
dc.identifier.issn2469-9969es_ES
dc.identifier.issn2469-9950es_ES
dc.identifier.urihttp://hdl.handle.net/10669/27863es_ES
dc.description.abstractWe have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada’s [Phys. Rev. Lett. 68, 1579 (1992)] rule. Comparison to a recent ab initio calculation is made.es_ES
dc.description.sponsorshipNSF CAREER award (NSF Grant No. 0454849)es_ES
dc.description.sponsorshipResearch Challenge grant from Wright State University and the Ohio Board of Regents.es_ES
dc.language.isoen_USes_ES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Costa Ricaes_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/cr/es_ES
dc.sourcePhysical Review B 76, 075131 (2007)es_ES
dc.subjectsilicenees_ES
dc.subjecttight-bindinges_ES
dc.subjectelectronic propertieses_ES
dc.titleElectronic structure of silicon-based nanostructureses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.typeArtículo científicoes_ES
dc.identifier.doidoi.org/10.1103/PhysRevB.76.075131es_ES
dc.description.procedenceUCR::Vicerrectoría de Investigación::Unidades de Investigación::Ciencias Básicas::Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA)es_ES


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