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Study of oxide bands in p-type porous silicon layers
The interest in developing fast and reliable chemical and biochemical sensors in an inexpensive way is something that has attracted a lot of efforts in the last decades. One of the potential material candidates is ...
Irreversibility of mechanical and hydrodynamic instabilities
The literature on dynamical systems has, for the most part, considered self-oscillators (i.e., systems capable of generating and maintaining a periodic motion at the expense of an external energy source with no corresponding ...
Interaction of a quantum field with a rotating heat bath
The linear coupling of a rotating heat bath to a quantum field is studied in the framework of the Markovian master equation for the field's non-unitary time evolution. The bath's rotation induces population inversion for ...
Negative Thermal Expansion in Open Perovskites near the Precipice of Structural Stability
Negative thermal expansion (NTE) describes the anomalous propensity of materials to shrink when heated. Since its discovery, the NTE effect has been found in a wide variety of materials with an array of magnetic, electronic ...
Pressure dependence of ferroelectric quantum critical fluctuation
Phase transitions to a long-range-ordered state driven by a softened phonon mode are ubiquitous across condensed matter physics, but the evolution of such a mode as the system is tuned to or from the transition has never ...
Cooperative elastic fluctuations provide tuning of the metal-insulator transition
Metal-to-insulator transitions driven by strong electronic correlations occur frequently in condensed matter systems, and are associated with remarkable collective phenomena in solids, including superconductivity and ...
Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon
Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
Vacuum treatment to stabilize oxidation at low temperature region in porous silicon
Oxidation in porous silicon is studied for as-etched samples and samples subjected to high vacuum at room temperature. Attenuated Total Reflectance (ATR) measurements in infrared spectroscopy for temperatures ranging from ...
Phototransport Properties of a-SiC:H Alloys
We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the ...