Now showing items 1-3 of 3
Stochastic approach to the smart quantum confinement model in porous silicon
(Surface Science 515 (2002) L509-L513, 2002)
A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the ...
Estimation of Silicon Nanocrystalline Sizes from Photoluminescence Measurements of RF Co-Sputtered Si/SiO2 Films
(Materials Research Society Symposium Proceedings 737 (2003), 2003)
A stochastic distribution of nanocrystalline sizes model is applied to fit photoluminescence (PL) spectra of luminescent Si nanocrystals in a Si/SiO2 matrix synthesized by RF co-sputtering on the top of quartz substrates. ...
Study of oxide bands in p-type porous silicon layers
The interest in developing fast and reliable chemical and biochemical sensors in an inexpensive way is something that has attracted a lot of efforts in the last decades. One of the potential material candidates is ...