Oxidation in porous silicon is studied for as-etched samples and samples subjected to high vacuum at room temperature. Attenuated Total Reflectance (ATR) measurements in infrared spectroscopy for temperatures ranging from ...

We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the ...

The interest in developing fast and reliable chemical and biochemical sensors in an inexpensive way is something that has attracted a lot of efforts in the last decades. One of the potential material candidates is ...

Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.

A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the ...

A stochastic distribution of nanocrystalline sizes model is applied to fit photoluminescence (PL) spectra of luminescent Si nanocrystals in a Si/SiO2 matrix synthesized by RF co-sputtering on the top of quartz substrates. ...

We describe a high vacuum metals deposition system based ona variation of a pendant-drop type electron beam evaporator.This system uses a Molybdenum crucible as an evaporantinstead of a rod or wire usually used in ultrathin ...