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Stochastic approach to the smart quantum confinement model in porous silicon 

Ramírez Porras, Arturo; Weisz, S. Z. (Surface Science 515 (2002) L509-L513, 2002)
A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the ...
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Design and Characterization of a High Vacuum Metals Deposition System based on Electron Beam Evaporation 

Ramírez Porras, Arturo; Avendaño Soto, Esteban Damián; Araya Pochet, José (2010-08-03)
We describe a high vacuum metals deposition system based ona variation of a pendant-drop type electron beam evaporator.This system uses a Molybdenum crucible as an evaporantinstead of a rod or wire usually used in ultrathin ...
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Estimation of Silicon Nanocrystalline Sizes from Photoluminescence Measurements of RF Co-Sputtered Si/SiO2 Films 

Ramírez Porras, Arturo; Fonseca, L. F.; Resto, O. (Materials Research Society Symposium Proceedings 737 (2003), 2003)
A stochastic distribution of nanocrystalline sizes model is applied to fit photoluminescence (PL) spectra of luminescent Si nanocrystals in a Si/SiO2 matrix synthesized by RF co-sputtering on the top of quartz substrates. ...
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Study of oxide bands in p-type porous silicon layers 

Rojas Fernández, Yoselin; Hernández López, María José; Ramírez Porras, Arturo (2019)
The interest in developing fast and reliable chemical and biochemical sensors in an inexpensive way is something that has attracted a lot of efforts in the last decades. One of the potential material candidates is ...

Vacuum treatment to stabilize oxidation at low temperature region in porous silicon 

Allen, Kevin; Pereira Cubillo, Juan Sebastián; Ramírez Porras, Arturo (2020)
Oxidation in porous silicon is studied for as-etched samples and samples subjected to high vacuum at room temperature. Attenuated Total Reflectance (ATR) measurements in infrared spectroscopy for temperatures ranging from ...

Phototransport Properties of a-SiC:H Alloys 

Balberg, I.; Nery, Guillermo; Ramírez Porras, Arturo; Resto, O.; Weisz, S. Z.; Lubianiker, Y. (1995)
We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the ...

Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon 

Weisz, S. Z.; Ramírez Porras, Arturo; Gómez, Manuel; Many, A.; Goldstein, Yehuda; Savir, Esther (1997)
Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.

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Ramírez Porras, Arturo (7)
Weisz, S. Z. (3)Resto, O. (2)Allen, Kevin (1)Araya Pochet, José (1)Avendaño Soto, Esteban Damián (1)Balberg, I. (1)Fonseca, L. F. (1)Goldstein, Yehuda (1)Gómez, Manuel (1)... View MoreTypeinfo:eu-repo/semantics/article (6)Artículo científico (2)info:eu-repo/semantics/conferenceObject (1)Objeto de conferencia (1)ProcedenceVicerrectoría de Investigación (5)Vicerrectoría de Docencia (4)... View MoreHas File(s)Yes (7)

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