Now showing items 1-3 of 3

    • Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon 

      Weisz, S. Z.; Ramírez Porras, Arturo; Gómez, Manuel; Many, A.; Goldstein, Yehuda; Savir, Esther (1997)
      Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
    • Study of oxide bands in p-type porous silicon layers 

      Rojas Fernández, Yoselin; Hernández López, María José; Ramírez Porras, Arturo (2019)
      The interest in developing fast and reliable chemical and biochemical sensors in an inexpensive way is something that has attracted a lot of efforts in the last decades. One of the potential material candidates is ...
    • Vacuum treatment to stabilize oxidation at low temperature region in porous silicon 

      Allen, Kevin; Pereira Cubillo, Juan Sebastián; Ramírez Porras, Arturo (2020)
      Oxidation in porous silicon is studied for as-etched samples and samples subjected to high vacuum at room temperature. Attenuated Total Reflectance (ATR) measurements in infrared spectroscopy for temperatures ranging from ...